Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea.
Nanotechnology. 2017 May 12;28(19):195703. doi: 10.1088/1361-6528/aa6740. Epub 2017 Mar 16.
Molybdenum disulfide (MoS) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and low-temperature processes. In this study, residue-free MoS thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS film thickness could be controlled by centrifuge condition in the range of 20 ∼ 40 nm, and its carrier concentration and mobility were measured at about 7.36 × 10 cm and 4.67 cm V s, respectively. Detailed analysis on the films was done by atomic force microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy measurements for verifying the film quality. For application of the photovoltaic device, a Au/MoS/silicon/In junction structure was fabricated, which then showed power conversion efficiency of 1.01% under illumination of 100 mW cm.
采用液相剥离法制备的二硫化钼（MoS）薄膜在大规模生产和低温工艺方面具有显著的应用潜力。在这项研究中，在液相剥离过程中形成了无残留的 MoS 薄膜，并通过叉指电极对其进行了电特性表征。然后，通过离心条件可以将 MoS 薄膜厚度控制在 20~40nm 的范围内，其载流子浓度和迁移率分别约为 7.36×10cm 和 4.67cmV s。通过原子力显微镜、拉曼光谱和高分辨率透射电子显微镜测量对薄膜进行了详细分析，以验证其薄膜质量。对于光伏器件的应用，制备了 Au/MoS/硅/In 结结构，在 100mW cm 的光照下，其光电转换效率为 1.01%。
