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氟化和热交联的多面体低聚倍半硅氧烷:用于高性能介电应用的新型有机-无机杂化材料。

Fluorinated and Thermo-Cross-Linked Polyhedral Oligomeric Silsesquioxanes: New Organic-Inorganic Hybrid Materials for High-Performance Dielectric Application.

机构信息

Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences , 345 Lingling Road, Shanghai 200032, P. R. China.

出版信息

ACS Appl Mater Interfaces. 2017 Apr 12;9(14):12782-12790. doi: 10.1021/acsami.7b01415. Epub 2017 Mar 31.

Abstract

A fluorinated and thermo-cross-linked polyhedral oligomeric silsesquioxane (POSS) has been successfully synthesized by thermal polymerization of a fluorinated POSS monomer having an inorganic silsesquioxane core and organic side chains bearing thermo-cross-linkable trifluorovinyl ether groups. This new inorganic-organic hybrid polymer shows high thermostability with a 5 wt % loss temperature of 436 °C, as well as good transparency (a sheet with an average thickness of 1.5 mm shows high transmittance of 92% varying from 400 to 1100 nm). Moreover, the polymer exhibits both low dielectric constant (<2.56) and low dissipation factor (<3.1 × 10) in a wide range of frequencies from 40 Hz to 30 MHz even at a high frequency of 5 GHz. The polymer also shows low water uptake (<0.04%) and low D (near 2.63) after immersing it in water at room temperature for 3 days. These data imply that this polymer is very suitable to be utilized as a high-performance dielectric material for fabrication of high-frequency printed circuit boards or encapsulation resins for integrated circuit dies in the microelectronic industry. Furthermore, this work also provides a route for the preparation of fluorinated POSS-based polymers.

摘要

一种氟化和热交联的多面体低聚倍半硅氧烷(POSS)已经通过具有无机 POSS 核和有机侧链的氟化 POSS 单体的热聚合成功合成,这些有机侧链带有可热交联的三氟乙烯基醚基团。这种新型的无机-有机杂化聚合物表现出很高的热稳定性,在 5wt%失重温度下达到 436°C,同时具有良好的透明度(厚度为 1.5mm 的薄片在 400 至 1100nm 的波长范围内具有高达 92%的高透光率)。此外,该聚合物在 40Hz 至 30MHz 的宽频率范围内表现出低介电常数(<2.56)和低损耗因子(<3.1×10),即使在 5GHz 的高频下也是如此。该聚合物在室温下浸入水中 3 天后,吸水率也很低(<0.04%),D 值(接近 2.63)也很低。这些数据表明,该聚合物非常适合用作高性能介电材料,用于制造高频印刷电路板或微电子行业集成电路芯片的封装树脂。此外,这项工作还为制备基于氟化 POSS 的聚合物提供了一条途径。

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