Farhanieh Omid, Sahafi Ali, Bardhan Roy Rupak, Ergun Arif Sanli, Bozkurt Ayhan
IEEE Trans Biomed Circuits Syst. 2017 Jun;11(3):534-546. doi: 10.1109/TBCAS.2017.2649942. Epub 2017 May 19.
Conventional High Intensity Focused Ultrasound (HIFU) is a therapeutic modality which is extracorporeally administered. In applications where a relatively small HIFU lesion is required, an intravascular HIFU probe can be deployed to the ablation site. In this paper, we demonstrate the design and implementation a fully integrated HIFU drive system on a chip to be placed on a 6 Fr catheter probe. An 8-element capacitive micromachined ultrasound transducer (CMUT) ring array of 2 mm diameter has been used as the ultrasound source. The driver chip is fabricated in 0.35 μm AMS high-voltage CMOS technology and comprises eight continuous-wave (CW) high-voltage CMUT drivers (10.9 ns and 9.4 ns rise and fall times at 20 V output into a 15 pF), an eight-channel digital beamformer (8-12 MHz output frequency with 11.25 phase accuracy) and a phase locked loop with an integrated VCO as a tunable clock source (128-192 MHz). The chip occupies 1.85 × 1.8 mm area including input and output (I/O) pads. When the transducer array is immersed in sunflower oil and driven by the IC with eight 20 V CW pulses at 10 MHz, real-time thermal images of the HIFU beam indicate that the focal temperature rises by 16.8 C in 11 seconds. Each HV driver consumes around 67 mW of power when driving the CMUT array at 10 MHz, which adds up to 560 mW for the whole chip. FEM based analysis reveals that the outer surface temperature of the catheter is expected to remain below the 42 C tissue damage limit during therapy.
传统的高强度聚焦超声(HIFU)是一种体外治疗方式。在需要相对较小的HIFU损伤的应用中,可以将血管内HIFU探头部署到消融部位。在本文中,我们展示了一种完全集成在芯片上的HIFU驱动系统的设计与实现,该芯片将放置在6 Fr导管探头上。一个直径为2 mm的8元电容式微机械超声换能器(CMUT)环形阵列已被用作超声源。驱动芯片采用0.35μm AMS高压CMOS技术制造,包括八个连续波(CW)高压CMUT驱动器(在20 V输出至15 pF时上升和下降时间分别为10.9 ns和9.4 ns)、一个八通道数字波束形成器(输出频率为8 - 12 MHz,相位精度为11.25°)以及一个带有集成VCO作为可调时钟源(128 - 192 MHz)的锁相环。该芯片包括输入和输出(I/O)焊盘在内,占据的面积为1.85×1.8 mm。当换能器阵列浸入葵花籽油中,并由该集成电路以10 MHz的八个20 V连续波脉冲驱动时,HIFU波束的实时热图像表明,在11秒内焦点温度升高了16.8℃。当以10 MHz驱动CMUT阵列时,每个高压驱动器消耗的功率约为67 mW,整个芯片的总功耗为560 mW。基于有限元法的分析表明,在治疗过程中,导管的外表面温度预计将保持在42℃的组织损伤极限以下。