Wafer-scale production of highly uniform two-dimensional MoS by metal-organic chemical vapor deposition.

Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide (MoS) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a MoS monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO/Si wafer. The influences of growth pressure, ambient gases (Ar, H), and S/Mo molar flow ratio on the MoS layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer MoS-based field effect transistors achieve an electron mobility of 0.47 cm V s and on/off current ratio of 5.4 × 10. This work demonstrates the potential for reliable wafer-scale production of 2D MoS for practical applications in next-generation electronic and optical devices.