Liu Yuchun, Gu Fuxing
Laboratory of Integrated Opto-Mechanics and Electronics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology Shanghai 200093 China
Nanoscale Adv. 2021 Feb 23;3(8):2117-2138. doi: 10.1039/d0na01043j. eCollection 2021 Apr 20.
Molybdenum disulfide (MoS) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS synthesis with high-quality. The 2D MoS field-effect transistor (MoS-FET) array with different configurations utilizes the high-quality MoS film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS-FET developments was provided based on large-area MoS film with different device configurations and performances. The different applications of MoS-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS synthesis and MoS-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.
二硫化钼(MoS)因其特殊的二维结构和独特的物理化学性质,作为缩小规模的集成电子学的一个有前途的候选材料,已引起了相当多的研究兴趣。然而,要获得具有所需材料质量和电学性能的大面积MoS单层以满足实际应用的要求,仍然具有挑战性。最近,各种研究都集中在高质量的晶圆级单层MoS合成上。具有不同配置的二维MoS场效应晶体管(MoS-FET)阵列利用高质量的MoS薄膜作为沟道,并表现出良好的性能。在这篇综述中,我们阐述了通过不同方法在晶圆级单层MoS合成方面的最新研究进展,包括金辅助剥离、化学气相沉积(CVD)、薄膜硫化、金属有机化学气相沉积(MOCVD)、原子层沉积(ALD)、气-液-固(VLS)法以及硫代盐的热解。然后,基于具有不同器件配置和性能的大面积MoS薄膜,对MoS-FET的发展进行了概述。还总结了MoS-FET在逻辑电路、基本存储器件和集成光电探测器中的不同应用。最后,我们基于晶圆级单层MoS合成和MoS-FET,考虑了在下一代集成电子学和柔性光电子学中开发实际应用的前景和挑战。