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发光二极管疗法预处理通过内皮型一氧化氮合酶依赖性机制减轻小鼠缺血性脑损伤。

Pretreatment with light-emitting diode therapy reduces ischemic brain injury in mice through endothelial nitric oxide synthase-dependent mechanisms.

作者信息

Lee Hae In, Lee Sae-Won, Kim So Young, Kim Nam Gyun, Park Kyoung-Jun, Choi Byung Tae, Shin Yong-Il, Shin Hwa Kyoung

机构信息

Department of Rehabilitation Medicine, School of Medicine, Pusan National University, Yangsan, Gyeongnam 50612, Republic of Korea; Research Institute for Convergence of Biomedical Science and Technology, Pusan National University Yangsan Hospital, Yangsan, Gyeongnam 50612, Republic of Korea.

Department of Korean Medical Science, School of Korean Medicine, Pusan National University, Yangsan, Gyeongnam 50612, Republic of Korea; Graduate Training Program of Korean Medicine for Healthy-Aging, Pusan National University, Yangsan, Gyeongnam 50612, Republic of Korea; Korean Medical Science Research Center for Healthy-Aging, Pusan National University, Yangsan, Gyeongnam 50612, Republic of Korea.

出版信息

Biochem Biophys Res Commun. 2017 May 13;486(4):945-950. doi: 10.1016/j.bbrc.2017.03.131. Epub 2017 Mar 24.

Abstract

Photostimulation with low-level light emitting diode therapy (LED-T) modulates neurological and psychological functions. The purpose of this study was to evaluate the effects of LED-T pretreatment on the mouse brain after ischemia/reperfusion and to investigate the underlying mechanisms. Ischemia/reperfusion brain injury was induced by middle cerebral artery occlusion. The mice received LED-T twice a day for 2 days prior to cerebral ischemia. After reperfusion, the LED-T group showed significantly smaller infarct and edema volumes, fewer behavioral deficits compared to injured mice that did not receive LED-T and significantly higher cerebral blood flow compared to the vehicle group. We observed lower levels of endothelial nitric oxide synthase (eNOS) phosphorylation in the injured mouse brains, but significantly higher eNOS phosphorylation in LED-T-pretreated mice. The enhanced phospho-eNOS was inhibited by LY294002, indicating that the effects of LED-T on the ischemic brain could be attributed to the upregulation of eNOS phosphorylation through the phosphoinositide 3-kinase (PI3K)/Akt pathway. Moreover, no reductions in infarct or edema volume were observed in LED-T-pretreated eNOS-deficient (eNOS) mice. Collectively, we found that pretreatment with LED-T reduced the amount of ischemia-induced brain damage. Importantly, we revealed that these effects were mediated by the stimulation of eNOS phosphorylation via the PI3K/Akt pathway.

摘要

低强度发光二极管疗法(LED-T)光刺激可调节神经和心理功能。本研究旨在评估LED-T预处理对小鼠脑缺血/再灌注后的影响,并探究其潜在机制。通过大脑中动脉闭塞诱导缺血/再灌注脑损伤。在脑缺血前,小鼠每天接受两次LED-T治疗,持续2天。再灌注后,与未接受LED-T治疗的损伤小鼠相比,LED-T组的梗死体积和水肿体积明显更小,行为缺陷更少,且与载体组相比脑血流量显著更高。我们观察到损伤小鼠脑中内皮型一氧化氮合酶(eNOS)磷酸化水平较低,但LED-T预处理小鼠中的eNOS磷酸化水平显著更高。LY294002可抑制增强的磷酸化eNOS,表明LED-T对缺血性脑的作用可能归因于通过磷酸肌醇3激酶(PI3K)/Akt途径上调eNOS磷酸化。此外,在LED-T预处理的eNOS缺陷(eNOS)小鼠中未观察到梗死体积或水肿体积的减少。总体而言,我们发现LED-T预处理减少了缺血诱导的脑损伤量。重要的是,我们揭示了这些作用是通过PI3K/Akt途径刺激eNOS磷酸化介导的。

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