Sevetson Jessica, Fittro Sarah, Heckman Emily, Haas Julie S
Department of Biological Sciences, Lehigh University, 111 Research Drive, Bethlehem, PA, 18015, USA.
J Physiol. 2017 Jul 1;595(13):4417-4430. doi: 10.1113/JP274049. Epub 2017 May 26.
Electrical synapses are modified by various forms of activity, including paired activity in coupled neurons and tetanization of the input to coupled neurons. We show that plasticity of electrical synapses that results from paired spiking activity in coupled neurons depends on calcium influx and calcium-initiated signalling pathways. Plasticity that results from tetanization of input fibres does not depend on calcium influx or dynamics. These results imply that electrically coupled neurons have distinct sets of mechanisms for adjusting coupling according to the specific type of activity they experience.
Recent results have demonstrated modification of electrical synapse strength by varied forms of neuronal activity. However, the mechanisms underlying plasticity induction in central mammalian neurons are unclear. Here we show that the two established inductors of plasticity at electrical synapses in the thalamic reticular nucleus - paired burst spiking in coupled neurons, and mGluR-dependent tetanization of synaptic input - are separate pathways that converge at a common downstream endpoint. Using occlusion experiments and pharmacology in patched pairs of coupled neurons in vitro, we show that burst-induced depression depends on calcium entry via voltage-gated channels, is blocked by BAPTA chelation, and recruits intracellular calcium release on its way to activation of phosphatase activity. In contrast, mGluR-dependent plasticity is independent of calcium entry or calcium dynamics. Together, these results show that the spiking-initiated mechanisms underlying electrical synapse plasticity are similar to those that induce plasticity at chemical synapses, and offer the possibility that calcium-regulated mechanisms may also lead to alternate outcomes, such as potentiation. Because these mechanistic elements are widely found in mature neurons, we expect them to apply broadly to electrical synapses across the brain, acting as the crucial link between neuronal activity and electrical synapse strength.
电突触可通过多种活动形式进行修饰,包括耦合神经元中的配对活动以及耦合神经元输入的强直刺激。我们发现,耦合神经元中配对尖峰活动导致的电突触可塑性取决于钙内流和钙启动的信号通路。输入纤维强直刺激导致的可塑性不依赖于钙内流或动力学。这些结果表明,电耦合神经元具有不同的机制集,可根据它们所经历的特定活动类型来调节耦合。
最近的研究结果表明,神经元活动的多种形式可修饰电突触强度。然而,中枢哺乳动物神经元中可塑性诱导的潜在机制尚不清楚。在这里,我们表明,丘脑网状核中电突触可塑性的两种既定诱导因素——耦合神经元中的配对爆发尖峰以及突触输入的代谢型谷氨酸受体(mGluR)依赖性强直刺激——是在一个共同的下游终点汇聚的独立途径。通过在体外对耦合神经元的膜片钳配对实验中进行阻塞实验和药理学研究,我们发现爆发诱导的抑制取决于通过电压门控通道的钙内流,被BAPTA螯合所阻断,并在激活磷酸酶活性的过程中募集细胞内钙释放。相比之下,mGluR依赖性可塑性独立于钙内流或钙动力学。总之,这些结果表明,电突触可塑性的尖峰启动机制与化学突触中诱导可塑性的机制相似,并提供了钙调节机制也可能导致诸如增强等替代结果的可能性。由于这些机制元件在成熟神经元中广泛存在。我们预计它们广泛适用于整个大脑的电突触,作为神经元活动与电突触强度之间的关键联系。