Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul, 04107, Republic of Korea.
Department of Chemistry, Chung-Ang University, 84 Heukseok-ro, Dongjak-Gu, Seoul, 06974, Republic of Korea.
Adv Mater. 2017 Jun;29(21). doi: 10.1002/adma.201607055. Epub 2017 Mar 29.
The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits.
在溶液处理的非晶氧化物半导体（AOS）中稳定和控制其电性能对于实现具有成本效益、高性能、大面积的电子器件至关重要。特别是杂质扩散、电不稳定性以及缺乏用于有源层的通用取代掺杂策略，阻碍了铜电极的工业应用以及基于 AOS 的薄膜晶体管（TFT）的电参数的微调。在这项研究中，作者采用多功能有机半导体（OSC）层作为溶液处理的薄膜钝化层和电荷转移掺杂剂。作为电活性杂质阻挡层，OSC 层通过抑制环境气体物种的吸附和铜离子扩散来增强 AOS TFT 的电稳定性。此外，有机层和 AOS 之间的电荷转移允许精细调整电性能并钝化 AOS TFT 中的电缺陷。多功能溶液处理有机层的开发使得生产低成本、高性能的氧化物半导体基电路成为可能。
