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层状反铁磁体中各向异性磁阻的建模

Modeling anisotropic magnetoresistance in layered antiferromagnets.

作者信息

Santos D L R, Pinheiro F A, Velev J, Chshiev M, d'Albuquerque E Castro J, Lacroix C

机构信息

Institut Néel, CNRS and Université Grenoble Alpes, Boite Postale 166, 38042 Grenoble Cedex 09, France. Centro Federal de Educação Tecnológica, Itaguaí 23812-101, Rio de Janeiro, Brazil.

出版信息

J Phys Condens Matter. 2017 Jun 14;29(23):235302. doi: 10.1088/1361-648X/aa6b2b. Epub 2017 Apr 4.

DOI:10.1088/1361-648X/aa6b2b
PMID:28374683
Abstract

We have investigated the electronic transport and the anisotropic magnetoresistance in systems consisting of pairs of antiferromagnetically aligned layers separated by a non-magnetic layer, across which an antiferromagnetic coupling between the double layers is established. Calculations have been performed within the framework of the tight-binding model, taking into account the exchange coupling within the ferromagnetic layers and the Rashba spin-orbit interaction. Conductivities have been evaluated in the ballistic regime, based on Kubo formula. We have systematically studied the dependence of the conductivity and of the anisotropic magnetoresistance on several material and structural parameters, such as the orientation of the magnetic moments relative to the crystalline axis, band filling, out-of-plane hopping and spin-orbit parameter.

摘要

我们研究了由非磁性层隔开的反铁磁排列层对组成的系统中的电子输运和各向异性磁电阻,通过该非磁性层在双层之间建立了反铁磁耦合。在紧束缚模型的框架内进行了计算,同时考虑了铁磁层内的交换耦合和Rashba自旋轨道相互作用。基于久保公式在弹道区域评估了电导率。我们系统地研究了电导率和各向异性磁电阻对几个材料和结构参数的依赖性,如磁矩相对于晶轴的取向、能带填充、面外跳跃和自旋轨道参数。

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