Zheng Zhenyi, Gu Youdi, Zhang Zhizhong, Zhang Xiwen, Zhao Tieyang, Li Huihui, Ren Lizhu, Jia Lanxin, Xiao Rui, Zhou Heng-An, Zhang Qihan, Shi Shu, Zhang Yue, Zhao Chao, Shen Lei, Zhao Weisheng, Chen Jingsheng
Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.
MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
Nano Lett. 2023 Jul 26;23(14):6378-6385. doi: 10.1021/acs.nanolett.3c01082. Epub 2023 Jul 7.
Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR in antiferromagnetic (AFM) systems has not been fully understood to date. In this work, we reported UMR in a YFeO/Pt heterostructure where YFeO is a typical AFM insulator. Magnetic-field dependence and temperature dependence of transport measurements indicate that magnon dynamics and interfacial Rashba splitting are two individual origins for AFM UMR, which is consistent with the UMR theory in ferromagnetic systems. We further established a comprehensive theoretical model that incorporates micromagnetic simulation, density functional theory calculation, and the tight-binding model, which explain the observed AFM UMR phenomenon well. Our work sheds light on the intrinsic transport property of the AFM system and may facilitate the development of AFM spintronic devices.
单向磁电阻（UMR）已在铁磁系统中得到深入研究，其主要由自旋相关和自旋翻转电子散射引起。然而，迄今为止，反铁磁（AFM）系统中的UMR尚未得到充分理解。在这项工作中，我们报道了YFeO/Pt异质结构中的UMR，其中YFeO是一种典型的反铁磁绝缘体。输运测量的磁场依赖性和温度依赖性表明，磁振子动力学和界面Rashba分裂是反铁磁UMR的两个独立起源，这与铁磁系统中的UMR理论一致。我们进一步建立了一个综合理论模型，该模型结合了微磁模拟、密度泛函理论计算和紧束缚模型，很好地解释了观察到的反铁磁UMR现象。我们的工作揭示了反铁磁系统的本征输运特性，并可能促进反铁磁自旋电子器件的发展。
