Lomov Andrey, Shcherbachev Kirill, Chesnokov Yurii, Kiselev Dmitry
Institute of Physics and Technology, Russian Academy of Sciences , Moscow, Russian Federation.
National University of Science and Technology (MISiS) , Moscow, Russian Federation.
J Appl Crystallogr. 2017 Mar 22;50(Pt 2):539-546. doi: 10.1107/S1600576717003259. eCollection 2017 Apr 1.
The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiO layer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5-20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.
采用一组互补方法研究了高剂量低能（2 keV）氦等离子体浸没离子注入及随后的热退火后p型Cz-Si(001)样品表层的结构变化，这些方法包括高分辨率X射线反射测量、高分辨率X射线衍射、透射电子显微镜和原子力显微镜。观察到形成了一种三层结构（表面为非晶态a-SiO层、非晶态a-Si层以及严重损伤的拉伸应变晶体c-Si层），退火后该结构依然存在。在注入后的样品中观察到了充满氦气的气泡。考虑了退火对三层结构和气泡演变的影响。结果表明，退火后气泡会长大。其特征尺寸确定在5 - 20 nm范围内。大的充满氦气的气泡位于非晶态a-Si层中。小气泡在受损的晶体Si层内部形成。这些气泡是c-Si层中拉伸应变的主要来源。
