Academy of Photoelectric Technology, HeFei University of Technology, HeFei, 230009, China.
Faculty of Physics, Philipps-Universität Marburg, Renthof 7, Marburg, 35032, Germany.
Sci Rep. 2017 Apr 10;7:46261. doi: 10.1038/srep46261.
This paper presents a significant effect of manganese ferrite nanoparticles (MnFeO NPs) on the increase of the surface photoconductivity of semiconductors. Herein, the optical characterization of photo-excited carriers of silicon coated with MnFeO NPs was studied by using THz time-domain spectroscopy (THz-TDs). We observed that silicon coated with MnFeO NPs provided a significantly enhanced attenuation of THz radiation in comparison with bare silicon substrates under laser irradiation. The experimental results were assessed in the context of a surface band structure model of semiconductors. In addition, photoconductive antennas coated with MnFeO NPs significantly improved the efficiency of THz radiation generation and signal to noise ratio of the THz signal. This work demonstrates that coating with MnFeO NPs could improve the overall performance of THz systems, and MnFeO NPs could be further used for the implementation of novel optical devices.
本文提出了锰铁氧体纳米粒子(MnFeO NPs)对半导体表面光导电性增加的显著影响。在此,通过太赫兹时域光谱(THz-TDS)研究了涂覆 MnFeO NPs 的硅的光激发载流子的光学特性。我们观察到,与激光照射下的裸硅衬底相比,涂覆 MnFeO NPs 的硅提供了太赫兹辐射的明显增强衰减。实验结果在半导体的表面能带结构模型的背景下进行了评估。此外,涂覆 MnFeO NPs 的光电导天线显著提高了太赫兹辐射产生的效率和太赫兹信号的信噪比。这项工作表明,涂覆 MnFeO NPs 可以提高太赫兹系统的整体性能,并且 MnFeO NPs 可以进一步用于实现新型光学器件。