Department of Physics, Harbin Institute of Technology , Harbin 150001, China.
School of Chemistry and Chemical Engineering, Harbin Institute of Technology , Harbin 150001, China.
ACS Appl Mater Interfaces. 2017 May 31;9(21):18362-18368. doi: 10.1021/acsami.7b04298. Epub 2017 May 16.
The lateral photovoltaic (LPV) effect has attracted much attention for a long time because of its application in position-sensitive detectors (PSD). Here, we report the ultrafast response of the LPV in amorphous MoS/Si (a-MoS/Si) junctions prepared by the pulsed laser deposition (PLD) technique. Different orientations of the built-in field and the breakover voltages are observed for a-MoS films deposited on p- and n-type Si wafers, resulting in the induction of positive and negative voltages in the a-MoS/n-Si and a-MoS/p-Si junctions upon laser illumination, respectively. The dependence of the LPV on the position of the illumination shows very high sensitivity (183 mV mm) and good linearity. The optical relaxation time of LPV with a positive voltage was about 5.8 μs in a-MoS/n-Si junction, whereas the optical relaxation time of LPV with a negative voltage was about 2.1 μs in a-MoS/p-Si junction. Our results clearly suggested that the inversion layer at the a-MoS/Si interface made a good contribution to the ultrafast response of the LPV in a-MoS/Si junctions. The large positional sensitivity and ultrafast relaxation of LPV may promise the a-MoS/Si junction's applications in fast position-sensitive detectors.
横向光伏 (LPV) 效应因其在位置敏感探测器 (PSD) 中的应用而受到长期关注。在这里，我们报告了通过脉冲激光沉积 (PLD) 技术制备的非晶硅 MoS/Si(a-MoS/Si) 结中 LPV 的超快响应。对于沉积在 p 型和 n 型 Si 晶圆上的 a-MoS 薄膜，观察到内置场和击穿电压的不同取向，导致激光照射时 a-MoS/n-Si 和 a-MoS/p-Si 结分别感应出正电压和负电压。LPV 对光照位置的依赖性表现出非常高的灵敏度（183 mV mm）和良好的线性。在 a-MoS/n-Si 结中，带正电压的 LPV 的光弛豫时间约为 5.8 μs，而在 a-MoS/p-Si 结中，带负电压的 LPV 的光弛豫时间约为 2.1 μs。我们的结果清楚地表明，a-MoS/Si 界面处的反型层对 a-MoS/Si 结中 LPV 的超快响应做出了很好的贡献。LPV 的大位置灵敏度和超快弛豫可能预示着 a-MoS/Si 结在快速位置敏感探测器中的应用。
