Centimeter-Scale Deposition of MoWSe Alloy Film for High-Performance Photodetectors on Versatile Substrates.

Because of their great potential for academic investigation and practical application in next-generation optoelectronic devices, ternary layered semiconductors have attracted considerable attention in recent years. Similar to the applications of traditional layered materials, practical applications of ternary layered semiconductor alloys require the synthesis of large-area samples. Here, we report the preparation of centimeter-scale and high-quality MoWSe alloy films on both a rigid SiO/Si substrate and a flexible polyimide (PI) substrate. Then, photodetectors based on these alloy films are fabricated, which are capable of conducting broad-band photodetection from ultraviolet to near-infrared region (370-808 nm) with high performance. The photodetector on SiO/Si substrates demonstrates a high responsivity (R) of 77.1 A/W, an outstanding detectivity (D*) of 1.1 × 10 Jones, and a fast response time of 8.3 ms. These figures-of-merit are much superior to those of the counterparts of binary material-based devices. Moreover, the photodetector on PI substrates also achieves high performance (R = 63.5 A/W, D* = 3.56 × 10 Jones). And no apparent degradation in the device properties is observed even after 100 bending cycles. These results make MoWSe alloy a highly qualified candidate for next-generation optoelectronic applications.