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C/ 石墨烯杂化结构中的分子排列和电荷转移。

Molecular Arrangement and Charge Transfer in C/Graphene Heterostructures.

机构信息

Department of Physics, University of California , Berkeley, California 94720, United States.

Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.

出版信息

ACS Nano. 2017 May 23;11(5):4686-4693. doi: 10.1021/acsnano.7b00551. Epub 2017 May 9.

Abstract

Charge transfer at the interface between dissimilar materials is at the heart of electronics and photovoltaics. Here we study the molecular orientation, electronic structure, and local charge transfer at the interface region of C deposited on graphene, with and without supporting substrates such as hexagonal boron nitride. We employ ab initio density functional theory with van der Waals interactions and experimentally characterize interface devices using high-resolution transmission electron microscopy and electronic transport. Charge transfer between C and the graphene is found to be sensitive to the nature of the underlying supporting substrate and to the crystallinity and local orientation of the C. Even at room temperature, C molecules interfaced to graphene are orientationally locked into position. High electron and hole mobilities are preserved in graphene with crystalline C overlayers, which has ramifications for organic high-mobility field-effect devices.

摘要

在不同材料界面处的电荷转移是电子学和光伏的核心。在这里,我们研究了 C 在没有和有六方氮化硼等支撑衬底的情况下沉积在石墨烯上的界面区域的分子取向、电子结构和局部电荷转移。我们采用具有范德华相互作用的第一性原理密度泛函理论,并使用高分辨率透射电子显微镜和电子输运实验来表征界面器件。发现 C 和石墨烯之间的电荷转移对底层支撑衬底的性质以及 C 的结晶度和局部取向敏感。即使在室温下,与石墨烯界面的 C 分子也被定向锁定在原位。在具有结晶 C 覆盖层的石墨烯中保持了高电子和空穴迁移率,这对有机高迁移率场效应器件有影响。

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