Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 04763, South Korea.
IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, South Korea.
Sci Adv. 2017 Apr 19;3(4):e1602726. doi: 10.1126/sciadv.1602726. eCollection 2017 Apr.
Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, "carristor") with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 10 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low-power consumption electronics.
最近在二维（2D）材料领域的发现导致了奇特器件的演示。尽管它们在电子学中有新的潜在应用，但金属/半导体势垒上的热激活输运设定了物理亚热离子限制。实现利用这一关注点的创新晶体管几何结构仍然是一个挑战。在这项工作中，引入了一类新的二维组装体（即“carristor”），其配置类似于金属-绝缘体-半导体结构。通过多数载流子和少数载流子穿过势垒的量子力学隧道，实现了高达 400,000 的电流整流比和高于室温 10 的开关比等卓越功能。这些 carristors 有可能作为低功耗电子学的基本构建块得到应用。
