Chu Dongil, Pak Sang Woo, Kim Eun Kyu
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul, 04763, South Korea.
Sci Rep. 2018 Jul 12;8(1):10585. doi: 10.1038/s41598-018-28765-4.
Next-generation flexible and transparent electronics demand newer materials with superior characteristics. Tin dichalcogenides, Sn(S,Se), are layered crystal materials that show promise for implementation in flexible electronics and optoelectronics. They have band gap energies that are dependent on their atomic layer number and selenium content. A variety of studies has focused in particular on tin disulfide (SnS) channel transistors with conventional silicon substrates. However, the effort of interchanging the gate dielectric by utilizing high-quality hexagonal boron nitride (hBN) still remains. In this work, the hBN coupled SnS thin film transistors are demonstrated with bottom-gated device configuration. The electrical transport characteristics of the SnS channel transistor present a high current on/off ratio, reaching as high as 10 and a ten-fold enhancement in subthreshold swing compared to a high-κ dielectric covered device. We also demonstrate the spectral photoresponsivity from ultraviolet to infrared in a multi-layered SnS phototransistor. The device architecture is suitable to promote diverse studied on flexible and transparent thin film transistors for further applications.
下一代柔性和透明电子器件需要具有卓越特性的新型材料。二硫属化锡（Sn(S,Se)）是层状晶体材料，在柔性电子学和光电子学领域具有应用潜力。它们的带隙能量取决于原子层数和硒含量。各种研究尤其聚焦于采用传统硅衬底的二硫化锡（SnS）沟道晶体管。然而，利用高质量六方氮化硼（hBN）来替换栅极电介质的工作仍在进行。在这项工作中，展示了具有底栅器件结构的hBN耦合SnS薄膜晶体管。SnS沟道晶体管的电输运特性呈现出高电流开/关比，高达10，并且与高κ电介质覆盖的器件相比，亚阈值摆幅提高了十倍。我们还在多层SnS光电晶体管中展示了从紫外到红外的光谱光响应性。该器件架构适合推动对柔性和透明薄膜晶体管进行多样化研究，以用于进一步的应用。
