Parish Chad M, Koyanagi Takaaki, Kondo Sosuke, Katoh Yutai
Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan.
Sci Rep. 2017 Apr 26;7(1):1198. doi: 10.1038/s41598-017-01395-y.
We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. SiC is considered for applications in advanced nuclear systems, as well as for electronic or spintronic applications requiring ion irradiation processing. β-SiC, preferred for nuclear applications, is metastable and undergoes a phase transformation at high temperatures (typically 2000 °C and above). Nuclear reactor concepts are not expected to reach the very high temperatures for thermal transformation. However, our results indicate incipient β → α phase transformation, in the form of small (~5-10 nm) pockets of α-SiC forming in the β matrix. In service transformation could degrade structural stability and fuel integrity for SiC-based materials operated in this regime. However, engineering this transformation deliberately using ion irradiation could enable new electronic applications.
我们观察到,在约1440°C下被中子辐照至9 dpa(每原子位移数)的β-SiC开始转变为α-SiC,辐射诱导的弗兰克位错环作为明显的形核位置。1440°C比SiC中通常的β→α相变温度低得多。SiC被考虑用于先进核系统,以及需要离子辐照处理的电子或自旋电子应用。β-SiC在核应用中更受青睐,它是亚稳的,在高温(通常为2000°C及以上)下会发生相变。核反应堆概念预计不会达到热转变所需的非常高的温度。然而,我们的结果表明,在β基体中形成了小的(约5 - 10纳米)α-SiC区域,呈现出β→α相变的初期状态。在这种情况下服役时,相变可能会降低基于SiC的材料的结构稳定性和燃料完整性。然而,通过离子辐照有意地控制这种相变可以实现新的电子应用。