Zhang Yanwen, Sachan Ritesh, Pakarinen Olli H, Chisholm Matthew F, Liu Peng, Xue Haizhou, Weber William J
1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA.
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
Nat Commun. 2015 Aug 12;6:8049. doi: 10.1038/ncomms9049.
A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effectively anneal pre-existing defects and restore the structural order. The threshold determined for this recovery process reveals that it can be activated by 750 and 850 keV Si and C self-ions, respectively. The results conveyed here can contribute to SiC-based device fabrication by providing a room-temperature approach to repair atomic lattice structures, and to SiC performance prediction as either a functional material for device applications or a structural material for high-radiation environments.
材料研究的一个长期目标是有效修复制造缺陷，或消除材料中预先存在的或环境诱导的损伤。碳化硅（SiC）是一种用于高温、高功率和高频应用的迷人宽带隙半导体。其高耐腐蚀性和抗辐射性使其成为一种关键的耐火/结构材料，在极端恶劣的辐射环境中具有巨大潜力。在此我们表明，高能离子通过非弹性电离转移到SiC电子系统的能量可以有效地退火预先存在的缺陷并恢复结构有序性。该恢复过程确定的阈值表明，它可以分别由750 keV和850 keV的Si和C自离子激活。本文传达的结果可通过提供一种室温方法来修复原子晶格结构，为基于SiC的器件制造做出贡献，并有助于将SiC作为器件应用的功能材料或高辐射环境的结构材料进行性能预测。
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