采用硅烷和硼氢化物前驱体在22纳米节点CMOS技术中进行ALD钨填充金属的pMOSFET

pMOSFETs Featuring ALD W Filling Metal Using SiH and BH Precursors in 22 nm Node CMOS Technology.

作者信息

Wang Guilei, Luo Jun, Liu Jinbiao, Yang Tao, Xu Yefeng, Li Junfeng, Yin Huaxiang, Yan Jiang, Zhu Huilong, Zhao Chao, Ye Tianchun, Radamson Henry H

机构信息

Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.

University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):306. doi: 10.1186/s11671-017-2080-2. Epub 2017 Apr 26.

DOI:10.1186/s11671-017-2080-2

PMID:28449546

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5406310/

Abstract

In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH and BH precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH is superior to that of devices featuring ALD W using BH. This disparity in device performance results from different metal gate-induced strain from ALD W using SiH and BH precursors, i.e. tensile stresses for SiH (~~2.4 GPa) and for BH (~~0.9 GPa).

摘要

本文研究了在22纳米节点互补金属氧化物半导体（CMOS）技术中，使用硅烷（SiH）和硼烷（BH）前驱体通过原子层沉积（ALD）工艺制备钨（W）的p型金属氧化物半导体场效应晶体管（pMOSFET）。研究发现，在阈值电压、驱动能力、载流子迁移率以及短沟道效应控制方面，使用SiH的ALD W器件性能优于使用BH的ALD W器件。器件性能的这种差异源于使用SiH和BH前驱体的ALD W产生的不同金属栅极诱导应变，即SiH产生的拉伸应力约为2.4吉帕（GPa），BH产生的拉伸应力约为0.9吉帕（GPa）。