Ikeda Shigeru, Fujita Wakaba, Okamoto Riku, Nose Yoshitaro, Katsube Ryoji, Yoshino Kenji, Harada Takashi
Department of Chemistry, Konan University Kobe Hyogo 658-8501 Japan
Department of Materials Science and Engineering, Kyoto University Kyoto 606-8501 Japan.
RSC Adv. 2020 Nov 5;10(66):40310-40315. doi: 10.1039/d0ra07904a. eCollection 2020 Nov 2.
Chalcopyrite CuGaSe single crystals were successfully synthesized by the flux method using a home-made Bridgman-type furnace. The grown crystals were nearly stoichiometric with a Se-poor composition. Although a wafer form of the thus-obtained single crystal showed poor p-type electrical properties due to such unfavorable off-stoichiometry, these properties were found to be improved by applying a post-annealing treatment under Se vapor conditions. As a result, an electrode derived from the Se-treated single crystalline wafer showed appreciable p-type photocurrents. After deposition of a CdS ultrathin layer and a nanoparticulate Pt catalyst on the surface of the electrode, appreciable photoelectrochemical H evolution was observed over the modified electrode under photoirradiation by simulated sunlight with application of a bias potential of 0 V.
采用自制的布里奇曼型炉，通过助熔剂法成功合成了黄铜矿CuGaSe单晶。生长的晶体几乎是化学计量比的，但硒含量不足。尽管由于这种不利的非化学计量比，由此获得的单晶片形式显示出较差的p型电学性能，但发现通过在硒蒸气条件下进行后退火处理可以改善这些性能。结果，由经硒处理的单晶晶体制成的电极显示出可观的p型光电流。在电极表面沉积CdS超薄层和纳米颗粒Pt催化剂后，在模拟太阳光照射下，施加0 V偏置电位，在改性电极上观察到明显的光电化学析氢现象。
