Zhu Yadan, Lu Taiping, Zhou Xiaorun, Zhao Guangzhou, Dong Hailiang, Jia Zhigang, Liu Xuguang, Xu Bingshe
Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, 030024, Taiyuan, China.
Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, 030024, Taiyuan, China.
Nanoscale Res Lett. 2017 Dec;12(1):321. doi: 10.1186/s11671-017-2109-6. Epub 2017 May 2.
InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.
在不同温度下，对InGaN/GaN多量子阱（MQWs）的阱/势垒上界面进行氢处理。氢处理温度对多量子阱的特性有很大影响。在850°C下进行的氢处理改善了多量子阱的表面和界面质量，并显著提高了室温光致发光（PL）强度。相比之下，与未经氢处理的参考样品相比，在730°C下进行氢处理的样品没有改善。基于对温度依赖的PL特性分析，得出结论：850°C的氢处理在减少多量子阱区域与缺陷相关的非辐射复合中心方面更有效，但对载流子局域化影响很小。因此，氢处理温度对于提高InGaN/GaN多量子阱的质量至关重要。
