Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States.
Department of Electrical Engineering and Center for High-Technology Materials, University of New Mexico , Albuquerque, New Mexico 87132, United States.
ACS Appl Mater Interfaces. 2017 May 24;9(20):17629-17636. doi: 10.1021/acsami.7b03889. Epub 2017 May 15.
The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy. Graphene properly grown by chemical vapor deposition on Ge(100), (111), or (110) effectively inhibits room-temperature oxidation of the surface. When graphene is transferred to the Ge surface, oxidation is reduced relative to that on uncovered Ge but has the same power law dependence. We conclude that access to the graphene/Ge interface must occur via defects in the graphene. The excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry.
通过 X 射线光电子能谱、拉曼光谱和透射电子显微镜研究了覆盖在石墨烯上的锗的氧化，石墨烯可以通过化学气相沉积在 Ge(100)、(111)或(110)表面生长或转移到表面。在 Ge(100)、(111)或(110)表面上通过化学气相沉积适当生长的石墨烯可以有效地抑制表面在室温下的氧化。当石墨烯转移到 Ge 表面时，与未覆盖的 Ge 相比，氧化程度降低，但具有相同的幂律依赖性。我们得出结论，必须通过石墨烯中的缺陷才能进入石墨烯/Ge 界面。在 Ge 上生长的石墨烯提供的优异钝化作用应该会增强 Ge 在电子器件行业中的应用。
