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基于准二维氧化钼的突触晶体管。

A Synaptic Transistor based on Quasi-2D Molybdenum Oxide.

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.

出版信息

Adv Mater. 2017 Jul;29(27). doi: 10.1002/adma.201700906. Epub 2017 May 9.

Abstract

Biological synapses store and process information simultaneously by tuning the connection between two neighboring neurons. Such functionality inspires the task of hardware implementation of neuromorphic computing systems. Ionic/electronic hybrid three-terminal memristive devices, in which the channel conductance can be modulated according to the history of applied voltage and current, provide a more promising way of emulating synapses by a substantial reduction in complexity and energy consumption. 2D van der Waals materials with single or few layers of crystal unit cells have been a widespread innovation in three-terminal electronic devices. However, less attention has been paid to 2D transition-metal oxides, which have good stability and technique compatibility. Here, nanoscale three-terminal memristive transistors based on quasi-2D α-phase molybdenum oxide (α-MoO ) to emulate biological synapses are presented. The essential synaptic behaviors, such as excitatory postsynaptic current, depression and potentiation of synaptic weight, and paired-pulse facilitation, as well as the transition of short-term plasticity to long-term potentiation, are demonstrated in the three-terminal devices. These results provide an insight into the potential application of 2D transition-metal oxides for synaptic devices with high scaling ability, low energy consumption, and high processing efficiency.

摘要

生物突触通过调节两个相邻神经元之间的连接来同时存储和处理信息。这种功能激发了神经形态计算系统硬件实现的任务。离子/电子混合三端忆阻器器件,其中通道电导可以根据施加的电压和电流的历史进行调制,通过显著降低复杂性和能耗,为模拟突触提供了更有前途的方法。二维范德华材料具有单层或少数层晶体单元,在三端电子器件中得到了广泛的创新。然而,二维过渡金属氧化物的关注度较低,但其具有良好的稳定性和技术兼容性。在这里,提出了基于准二维α 相氧化钼 (α-MoO ) 的纳米级三端忆阻晶体管来模拟生物突触。在三端器件中展示了基本的突触行为,如兴奋性突触后电流、突触权重的抑制和增强以及成对脉冲易化,以及短期可塑性向长期增强的转变。这些结果为具有高缩放能力、低能耗和高处理效率的突触器件的二维过渡金属氧化物的潜在应用提供了深入的了解。

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