Yang Lifeng, Wang Tao, Zou Ying, Lu Hong-Liang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800, China.
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Nanoscale Res Lett. 2017 Dec;12(1):339. doi: 10.1186/s11671-017-2104-y. Epub 2017 May 8.
X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPO layer is easily formed at the HfO/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin AlO layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
利用X射线光电子能谱和高分辨率透射电子显微镜来确定通过原子层沉积在磷化铟（InP）上生长的氧化铪（HfO）和铪铝氧化物（HfAlO）栅极电介质的界面特性。在HfO/InP界面处容易形成一层不理想的界面磷化铟氧化物（InPO）层，这会严重降低电学性能。然而，当在InP上生长HfAlO电介质时，以超薄氧化铝（AlO）层开始，则可以实现陡峭的界面。已确定HfAlO/InP异质结的价带和导带偏移分别为1.87±0.1和2.83±0.1电子伏特。这些优点使HfAlO成为InP金属氧化物半导体场效应晶体管（MOSFET）的潜在电介质。
