Zhou Xiaorun, Lu Taiping, Zhu Yadan, Zhao Guangzhou, Dong Hailiang, Jia Zhigang, Yang Yongzhen, Chen Yongkang, Xu Bingshe
Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China.
Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China.
Nanoscale Res Lett. 2017 Dec;12(1):354. doi: 10.1186/s11671-017-2115-8. Epub 2017 May 16.
Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H proportion further increases, stress relaxation and H over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.
系统研究了不同氢（H）含量下氮化镓势垒生长过程中InGaN/GaN多量子阱（MQWs）的表面形貌演化机制。发现镓表面扩散速率、应力弛豫和氢蚀刻效应是影响表面演化的主要因素。随着H含量从0增加到6.25%，镓表面扩散速率和蚀刻效应逐渐增强，这有利于获得具有低密度坑的光滑表面。当H比例进一步增加时，应力弛豫和氢过蚀刻效应开始成为主导因素，这会降低表面质量。此外，还深入讨论了表面演化对InGaN/GaN MQWs界面和光学性质的影响。本文对表面演化机制的综合研究为高质量InGaN/GaN异质结构的制备提供了技术和理论支持。
