Department of Materials Science and Engineering Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul 03722, Republic of Korea.
Nanoscale. 2017 Jun 1;9(21):7104-7113. doi: 10.1039/c6nr09894k.
The enhancement in electrical transport properties of exfoliated individual RuO NSs was systemically investigated for their application in flexible electronics and optoelectronics. Decoration of Ag NPs on the surface of the RuO NSs provides donor electrons and dramatically increases the electrical conductivity of the monolayer RuO NSs by up to 3700%. The n-type doping behavior was confirmed via Hall measurement analysis of the doped RuO NSs. The layer number- and temperature-dependence of the conductivity were also investigated. Moreover, carrier concentration and mobility were obtained from Hall measurements, indicating that the undoped RuO NSs had ambipolar transport and semi-metallic characteristics. Moreover, the Ag-doped RuO NS multilayer films on polycarbonate substrates were demonstrated by the Langmuir-Blodgett assembly methods, showing one-third reduction in the sheet resistance and extraordinarily high bending stability that the change in the resistance was less than 1% over 50 000 cycles.
为了将其应用于柔性电子和光电子学，系统地研究了剥离的 RuO NSs 个体的电输运性能的增强。在 RuO NSs 表面上装饰 Ag NPs 提供了供体电子，并使单层 RuO NSs 的电导率显著增加了 3700%。通过掺杂 RuO NSs 的 Hall 测量分析证实了 n 型掺杂行为。还研究了电导率的层数和温度依赖性。此外，从 Hall 测量获得了载流子浓度和迁移率，表明未掺杂的 RuO NSs 具有双极输运和半金属特性。此外，通过 Langmuir-Blodgett 组装方法在聚碳酸酯基板上展示了 Ag 掺杂 RuO NSs 多层膜，其方阻值降低了三分之一，而且弯曲稳定性极高，在 50000 次循环中电阻的变化小于 1%。
