在 Si（111）上的 FIB 图案化 3C-SiC 纳米结构上外延生长石墨烯：减少铣削损伤。

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage.

机构信息

School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty, Queensland University of Technology, QLD, Australia.

出版信息

Nanotechnology. 2017 Aug 25;28(34):345602. doi: 10.1088/1361-6528/aa752e. Epub 2017 May 26.

DOI:10.1088/1361-6528/aa752e

PMID:28548043

Abstract

Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.

摘要

在 SiC 上外延生长石墨烯是一种可扩展的方法，不需要任何进一步的转移步骤，这使其成为制造石墨烯纳米结构的理想平台。聚焦离子束（FIB）是探索将 SiC 上石墨烯的横向尺寸缩小到纳米级的非常有前途的工具。然而，石墨烯暴露在 Ga 束下会导致严重的表面损伤，包括非晶化和污染，从而阻止了外延石墨烯的生长。在本文中，我们证明了在进行石墨烯生长之前，使用保护性硅层结合 FIB 图案化可以显著降低与 FIB 铣削相关的损伤。使用这种方法，我们成功地在 3C-SiC/Si FIB 图案化纳米结构上实现了石墨烯的生长。