Hasegawa Mika, Sugawara Kenta, Suto Ryota, Sambonsuge Shota, Teraoka Yuden, Yoshigoe Akitaka, Filimonov Sergey, Fukidome Hirokazu, Suemitsu Maki
Research Institute of Electrical Communications, Tohoku University, Sendai, 980-8577, Japan.
JAEA, Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5148, Japan.
Nanoscale Res Lett. 2015 Dec;10(1):421. doi: 10.1186/s11671-015-1131-9. Epub 2015 Oct 26.
Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni3C/NiCx)/graphene/Ni/Ni silicides (Ni2Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene.
通过在硅衬底上异质外延生长的3C - SiC薄膜上沉积超薄（2纳米）镍层，在硅衬底上进行了低温（约1073 K）石墨烯的制备。角分辨同步辐射X射线光电子能谱（SR - XPS）结果表明，从表面到本体的堆叠顺序为：碳化镍（Ni3C/NiCx）/石墨烯/镍/硅化镍（Ni2Si/NiSi）/3C - SiC/硅。石墨化退火过程中的原位SR - XPS表明，石墨烯是在冷却阶段形成的。我们得出结论，硅化镍和碳化镍的形成在石墨烯的形成过程中起着至关重要的作用。
