School of Science, Beijing Jiaotong University , Beijing 100044, China.
Wuhan China Star Optoelectronics Technology Co., Ltd. , Wuhan 430075, China.
ACS Appl Mater Interfaces. 2017 Jun 28;9(25):21573-21578. doi: 10.1021/acsami.7b04993. Epub 2017 Jun 14.
High-performance graphene-based transistors crucially depend on the creation of the high-quality graphene-metal contacts. Here we report an approach for achieving ultralow contact resistance simply with optical lithography by engineering a metal-graphene interface. Note that a significant improvement with optical lithography for the contact-treated graphene device leads to a contact resistance as low as 150 Ω·μm. The residue-free sacrificial film impedes the photoresist from further doping graphene, and all of the source and drain contact regions defined by optical lithography remain intact. This approach, being compatible with complementary metal-oxide-semiconductor (CMOS) fabrication processes regardless of the source of graphene, would hold promise for the large-scale production of graphene-based transistors with optical lithography.
高性能基于石墨烯的晶体管的关键在于高质量石墨烯-金属接触的创造。在这里，我们通过工程化金属-石墨烯界面报告了一种通过光学光刻实现超低接触电阻的方法。请注意，对于经过接触处理的石墨烯器件，光学光刻的显著改进导致接触电阻低至 150 Ω·μm。无残留的牺牲薄膜阻止了光刻胶对石墨烯的进一步掺杂，并且由光学光刻定义的所有源极和漏极接触区域都保持完整。这种方法与互补金属氧化物半导体（CMOS）制造工艺兼容，与石墨烯的来源无关，有望通过光学光刻大规模生产基于石墨烯的晶体管。
