在六方氮化硼上生长的石墨烯畴的边缘控制。

Edge control of graphene domains grown on hexagonal boron nitride.

机构信息

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

出版信息

Nanoscale. 2017 Aug 17;9(32):11475-11479. doi: 10.1039/c7nr02578e.

DOI:10.1039/c7nr02578e

PMID:28580985

Abstract

The edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying the ratio of working-gases. Edge directions were determined with the help of both moiré patterns and atomic-resolution images obtained via atomic force microscopy measurements. It is believed that the variation of graphene edges is mainly attributed to different growth rates of armchair and zigzag edges. This work demonstrates a potential approach to fabricate smooth-edge graphene ribbons on h-BN.

摘要

石墨烯的边缘结构对其电子性质有重要影响。然而，在绝缘衬底上控制石墨烯畴的边缘结构仍然具有挑战性。在这里，我们通过改变工作气体的比例来展示在六方氮化硼（h-BN）上对石墨烯畴的边缘控制。在莫尔图案和原子力显微镜测量得到的原子分辨率图像的帮助下，确定了边缘方向。据信，石墨烯边缘的变化主要归因于扶手椅和锯齿边缘的不同生长速率。这项工作展示了在 h-BN 上制备光滑边缘石墨烯带的一种有潜力的方法。