Institute of Organic and Polymeric Materials, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan, ROC.
Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan, ROC.
J Colloid Interface Sci. 2017 Oct 15;504:570-578. doi: 10.1016/j.jcis.2017.06.012.
We applied the nitrogen-doped graphene@nickel oxide (NGE/NiO) nanocomposite doped TiO as a photo-anode for dye-sensitized solar cells (DSSCs) on fluorine-doped tin oxide (FTO) substrates by screen printing method. Power conversion efficiency (PCE) of 9.75% was achieved for this DSSCs device, which is greater than that of DSSCs devices using GO/TiO, and NiO/TiO based photo-anodes (PCE=8.55, and 9.11%). Also, the fill factor (FF) of the DSSCs devices using the NGE/NiO/TiO nanocomposite photo-anode was better than that of other photo-anodes. The NGE/NiO/TiO short-circuit photocurrent density (J) of 19.04mAcm, open circuit voltage (V) of 0.76V, fill factor (FF) of 0.67 and dye absorption rate 0.21×10molcm. The obtained results suggest that as-prepared NGE/NiO/TiO nanocomposite is suitable photo-anode for DSSCs application.
我们采用氮掺杂石墨烯@氧化镍（NGE/NiO）纳米复合材料掺杂 TiO 作为光阳极，通过丝网印刷法在掺氟氧化锡（FTO）基底上制备染料敏化太阳能电池（DSSCs）。该 DSSCs 器件的功率转换效率（PCE）达到 9.75%，高于使用 GO/TiO 和 NiO/TiO 基光阳极的 DSSCs 器件（PCE=8.55 和 9.11%）。此外，使用 NGE/NiO/TiO 纳米复合材料光阳极的 DSSCs 器件的填充因子（FF）也优于其他光阳极。NGE/NiO/TiO 短路光电流密度（J）为 19.04mAcm，开路电压（V）为 0.76V，填充因子（FF）为 0.67，染料吸收率为 0.21×10molcm。结果表明，所制备的 NGE/NiO/TiO 纳米复合材料适合用于 DSSCs 应用的光阳极。
