Elettra Sincrotrone Trieste S.c.p.A. , Basovizza, I-34012 Trieste, Italy.
CNR-SPIN, UOS Salerno , I-84084 Fisciano, Italy.
ACS Appl Mater Interfaces. 2017 Jul 12;9(27):23099-23106. doi: 10.1021/acsami.7b03181. Epub 2017 Jun 26.
We report the study of anatase TiO(001)-oriented thin films grown by pulsed laser deposition on LaAlO(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti only in a well-defined range of deposition pressure; outside this range, Ti and the strength of the in-gap states are reduced.
我们报告了在 LaAlO(001) 上通过脉冲激光沉积生长的锐钛矿 TiO(001) 取向薄膜的研究。采用了原位和非原位相结合的方法，以解决 Ti 局域态的起源及其与表面和亚表面结构和电子性质的关系。使用共振 X 射线光电子能谱分析局域带隙态，并将其与 Ti 电子构型相关联，局域带隙态在整个薄膜厚度上均匀分布。我们发现，在沉积压力的一定范围内，增加氧压对应于 Ti 的增加;在这个范围之外，Ti 和带隙态的强度都会降低。
