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二维硅纳米片的可扩展合成。

Scalable Synthesis of 2D Si Nanosheets.

机构信息

State Key Lab of New Ceramic and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.

Center for Advanced Mechanics and Materials, CNMM, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, China.

出版信息

Adv Mater. 2017 Aug;29(31). doi: 10.1002/adma.201701777. Epub 2017 Jun 19.

Abstract

2D Si nanomaterials have attracted tremendous attention due to their novel properties and a wide range of potential applications from electronic devices to energy storage and conversion. However, high-quality and large-scale fabrication of 2D Si remains challenging. This study reports a room-temperature and one-step synthesis technique that leads to large-scale and low-cost production of Si nanosheets (SiNSs) with thickness ≈4 nm and lateral size of several micrometers, based on the intrinsic delithiation process of chemically leaching lithium from the Li Si alloy. Together with experimental results, a combination of theoretical modeling and atomistic simulations indicates that the formation of single SiNS arises from spontaneous delamination of nanosheets from their substrate due to delithiation-induced mismatch. Subsequently, the synthesized Si nanosheets evolve from amorphous to nanocrystalline to crystalline structures during annealing at different temperatures. It is demonstrated that these SiNSs possess unique mechanical properties, in particular ultralow friction, in contrast to their bulk counterparts.

摘要

二维硅纳米材料由于其独特的性质和广泛的潜在应用,从电子器件到能量存储和转换,引起了人们的极大关注。然而,高质量和大规模制备二维硅仍然具有挑战性。本研究报道了一种室温一步合成技术,该技术基于从 Li-Si 合金中化学浸出锂的内在脱锂过程,导致具有 ≈4nm 厚度和几微米横向尺寸的硅纳米片(SiNSs)的大规模和低成本生产。结合实验结果,理论建模和原子模拟的组合表明,由于脱锂诱导的不匹配,单 SiNS 的形成源自从其衬底自发分层的纳米片。随后,在不同温度退火时,合成的硅纳米片从非晶态转变为纳米晶态再转变为晶态结构。结果表明,与块状硅相比,这些 SiNSs 具有独特的力学性能,特别是超低摩擦。

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