School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
Kunming Institute of Physics, Kunming, 650223, China.
Sci Rep. 2017 Jun 20;7(1):3856. doi: 10.1038/s41598-017-03876-6.
Due to the demand of controlling magnetism by electric fields for future storage devices, materials with magnetoelectric coupling are of great interests. Based on first-principles calculations, we study the electronic and magnetic properties of a double perovskite SrCoMoO (SCMO) in a hybrid heterostructure combined with BaTiO (BTO) in different polarization states. The calculations show that by introducing ferroelectric state in BTO, SCMO transforms from an antiferromagnetic semiconductor to a half-metal. Specially, altering the polarization direction not only controls the interfacial magnetic moment, but also changes the orbital occupancy of the Co-3d state. This novel multiple magnetoelectric coupling opens possibilities for designing new type of spintronic and microelectronic devices with controllable degree of freedom of interfacial electrons in the heterostructures.
由于未来存储设备对电场控制磁性的需求，具有磁电耦合的材料引起了极大的关注。基于第一性原理计算，我们研究了不同极化状态下 BaTiO（BTO）与双钙钛矿 SrCoMoO（SCMO）形成的混合异质结构的电子和磁性。计算表明，通过在 BTO 中引入铁电态，SCMO 从反铁磁半导体转变为半金属。特别地，改变极化方向不仅可以控制界面磁矩，还可以改变 Co-3d 态的轨道占据。这种新型的多重磁电耦合为设计新型的自旋电子学和微电子器件提供了可能性，这些器件在异质结构中具有可控制的界面电子自由度。
