The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO/NiO pn heterojunction and Ni/Au composite electrode.

A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO/NiO pn heterojunction was demonstrated and exhibited lower dark current (I ) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO/NiO films, demonstrating a high resistance state and contributing to a lower I of 0.033 nA, two orders of magnitude lower than that of the single-material devices. Under UV illumination, the interface self-depleting effect arising from the dissociation and accumulation of photogenerated carriers was eliminated, ensuring loss-free responsivity (R) and a remarkable specific detectivity (D*) of 1.56 × 10 cm Hz W for the optimal device. The device with the structure of ITO/TiO/NiO/Au was measured to prove the mechanisms of interface self-depleting in dark and elimination of the depletion layer under UV illumination. Meanwhile, shortened decay time was achieved in the pn heterojunction UV photodetector. This suggests that the self-depleting devices possess the potential to further enhance photodetection performance.