Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
Proc Natl Acad Sci U S A. 2017 Jul 11;114(28):E5522-E5529. doi: 10.1073/pnas.1707849114. Epub 2017 Jun 26.
Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for "green" electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are () collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, () release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and () planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.
基于铸造的瞬态硅电子器件制造途径有可能成为“绿色”电子器件、可生物降解植入物、硬件安全数据存储系统和不可恢复远程设备的制造基础。本文介绍了使最先进的硅互补金属氧化物半导体 (CMOS) 铸造厂能够用于高性能、水溶性电子器件的材料和加工方法。关键要素是：(i) 可生物降解电子材料（例如硅、钨、氮化硅、二氧化硅）的集合，以及与集成电路行业目前使用的制造工艺兼容的器件架构；(ii) 释放方案和转移打印方法，用于将以这种方式形成的多个超薄组件集成到可生物降解聚合物衬底上；以及 (iii) 平面化和金属化技术，以产生互连和功能齐全的系统。以这种方式创建的各种 CMOS 器件和电路元件以及对其电气特性的详细测量突出了这些能力。在水基环境中的加速溶解研究揭示了与底层瞬态行为相关的化学动力学。结果证明了使用铸造制造途径制造复杂形式的瞬态电子器件的技术可行性，其功能能力和成本结构可以支持生物医学、军事、工业和消费行业的各种应用。
