Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany.
Nano Lett. 2014 May 14;14(5):2604-9. doi: 10.1021/nl500428v. Epub 2014 Apr 1.
Efficient infrared light emitters integrated on the mature Si technology platform could lead to on-chip optical interconnects as deemed necessary for future generations of ultrafast processors as well as to nanoanalytical functionality. Toward this goal, we demonstrate the use of GaAs-based nanowires as building blocks for the emission of light with micrometer wavelength that are monolithically integrated on Si substrates. Free-standing (In,Ga)As/GaAs coaxial multishell nanowires were grown catalyst-free on Si(111) by molecular beam epitaxy. The emission properties of single radial quantum wells were studied by cathodoluminescence spectroscopy and correlated with the growth kinetics. Controlling the surface diffusivity of In adatoms along the NW side-walls, we improved the spatial homogeneity of the chemical composition along the nanowire axis and thus obtained a narrow emission spectrum. Finally, we fabricated a light-emitting diode consisting of approximately 10(5) nanowires contacted in parallel through the Si substrate. Room-temperature electroluminescence at 985 nm was demonstrated, proving the great potential of this technology.
高效的红外发光二极管集成在成熟的硅技术平台上，可以实现芯片上的光互连，这对于未来几代超高速处理器以及纳米分析功能是必要的。为此，我们展示了使用基于 GaAs 的纳米线作为发射具有微米波长的光的构建块，这些纳米线是在 Si 衬底上单片集成的。通过分子束外延，在 Si(111)上无催化剂生长了自由-standing 的（In,Ga）As/GaAs 同轴多壳纳米线。通过阴极发光光谱研究了单个径向量子阱的发射特性，并与生长动力学相关联。通过控制沿 NW 侧壁的 In 原子的表面扩散率，我们改善了纳米线轴向上的化学成分的空间均匀性，从而获得了窄的发射光谱。最后，我们通过 Si 衬底上的平行接触制造了一个由大约 10(5)个纳米线组成的发光二极管。在室温下，在 985nm 处实现了电致发光，证明了这项技术的巨大潜力。
