通过 X 射线倒易空间映射研究非极性 (112-0) 平面内 GaN/GaN 层中的各向异性双轴应变。

Anisotropically biaxial strain in non-polar (112-0) plane In Ga N/GaN layers investigated by X-ray reciprocal space mapping.

机构信息

Key Laboratory of Semiconductor Materials Science, and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China.

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.

出版信息

Sci Rep. 2017 Jul 3;7(1):4497. doi: 10.1038/s41598-017-04854-8.

DOI:10.1038/s41598-017-04854-8

PMID:28674408

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5495801/

Abstract

In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In Ga N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In Ga N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of In Ga N layer releases through surface roughening and the 3D growth-mode.

摘要

在这项研究中，通过 X 射线衍射（XRD）分析研究了非极性 a 面 GaN 上 InGaN 的铟组成 x 以及各向异性双轴应变。根据 XRD 倒易晶格空间映射，随着铟组成的增加，InGaN 倒易晶格点的最大值逐渐从完全压缩应变转移到完全弛豫位置，然后再转移到反向拉伸应变。为了充分了解三元合金层中的应变，使用 a 面氮化物生长高质量的器件结构是有帮助的。随着层厚度的增加，InGaN 层的应变通过表面粗化和 3D 生长模式释放。