脉冲激光沉积法制备的应变钙钛矿 KTaO(3) 薄膜的结构。
The structure of strained perovskite KTaO(3) thin films prepared by pulsed laser deposition.
机构信息
Microelectronics and Materials Physics Laboratories, University of Oulu, POB 4500, FI-90014 Oulun Yliopisto, Finland.
出版信息
J Phys Condens Matter. 2012 Aug 15;24(32):325901, 1-4. doi: 10.1088/0953-8984/24/32/325901. Epub 2012 Jul 12.
Epitaxial perovskite potassium tantalate (KTaO(3)) films with thicknesses of 7.4-36 nm are grown on SrTiO(3)(001) substrates by pulsed laser deposition. X-ray diffraction (XRD) analysis reveals evolution of lattice strain with increasing film thickness. A biaxial compressive in-plane strain as large as - 2.1% is obtained in the 7.4 nm-thick film. A bi-layer microstructure is detected in the 18 nm-thick film, suggesting the possibility for an abrupt strain relaxation.
采用脉冲激光沉积法在 SrTiO(3)(001) 衬底上生长了厚度为 7.4-36nm 的外延钙钛矿钾钽酸盐（KTaO(3)）薄膜。X 射线衍射（XRD）分析表明，晶格应变随薄膜厚度的增加而演变。在 7.4nm 厚的薄膜中获得了高达-2.1%的双轴压缩面内应变。在 18nm 厚的薄膜中检测到双层微结构，表明存在应变突然松弛的可能性。
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