Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias.

This work demonstrates void-free cobalt filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and processes are described. This work extends understanding and application of the additive-derived S-shaped Negative Differential Resistance (S-NDR) mechanism, including previous demonstrations of superconformal filling of TSVs with nickel, copper, zinc and gold.