用于微机电系统技术的大规模硅通孔的自底向上铜填充

Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology.

作者信息

Menk L A, Josell D, Moffat T P, Baca E, Blain M G, Smith A, Dominguez J, McClain J, Yeh P D, Hollowell A E

机构信息

Microsystems and Engineering Sciences Applications (MESA) Complex, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA.

Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

出版信息

J Electrochem Soc. 2018;166(1). doi: https://doi.org/10.1149/2.0091901jes.

PMID:33041354

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7542679/

Abstract

An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO -0.25 mol/L CHSOH with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented.

摘要

详细介绍了一种用于通过铜对亚毫米级硅通孔（TSV）进行无空洞自底向上填充的电沉积工艺。在恒电位控制下，600μm深、标称直径125μm的金属化通孔在不到7小时内被铜填充。电解液由1.25mol/L硫酸铜-0.25mol/L甲磺酸组成，并添加了聚醚和卤化物，以选择性抑制金属在自由表面和侧壁上的沉积。本文对用于识别和优化自底向上无空洞特征填充的程序进行了简要定性讨论。