Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan.
Nanotechnology. 2017 Sep 20;28(38):385301. doi: 10.1088/1361-6528/aa7f49. Epub 2017 Jul 12.
Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.
离子注入纳米级孔径（纳米孔）是一种将离子精确定位在硅基质中的有前途的方法，这是下一代电子和量子计算设备的要求。本文报道了应用原子探针层析术（APT）来研究通过直径为 10nm 的纳米孔注入硅后锗原子的三维分布，以评估注入掺杂剂的数量和空间分布。通过 APT 获得的实验结果与考虑光刻和离子注入过程中的几个效应（如沟道效应和抗蚀剂流动）的简单模拟结果一致。
