Department of Electrical Engineering, National Dong Hwa University, Hualien 97401, Taiwan.
Nanotechnology. 2017 Sep 20;28(38):38LT02. doi: 10.1088/1361-6528/aa80b4. Epub 2017 Jul 19.
We explore the use of cubic-zinc peroxide (ZnO) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO layer provides a sufficient resistivity to the Cu/ZnO/ZnO/ITO devices. The high resistivity of ZnO encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.
我们探索了使用立方氧化锌过氧化物（ZnO）作为电化学金属化存储器（ECM）单元的开关材料。通过简单的过氧化物表面处理合成了 ZnO。由于六方 ZnO 材料的自掺杂性质，未经表面处理的器件表现出很高的漏电流。因此，只有在采用非常高的电流容限时才能观察到其开关行为。合成的 ZnO 层为 Cu/ZnO/ZnO/ITO 器件提供了足够的电阻率。ZnO 的高电阻率促使形成一个导电路径，以便在较低的工作电流下激活开关行为。在经过表面处理的器件中观察到了具有足够耐久性和适当存储窗口的易失性和非易失性开关行为。在室温下保留时间超过 10 秒证实了器件的非易失性行为。此外，与其他报道的基于 ZnO 的 ECM 单元相比，我们提出的器件结构能够在较低的工作电流下工作。
