Simanjuntak Firman Mangasa, Chandrasekaran Sridhar, Lin Chun-Chieh, Tseng Tseung-Yuen
Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan.
Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu, 30010, Taiwan.
Nanoscale Res Lett. 2018 Oct 19;13(1):327. doi: 10.1186/s11671-018-2743-7.
The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO promotes the occurrence of switching behavior in Cu/ZnO/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO is responsible for this degradation behavior and fine tuning on ZnO properties, which is necessary to achieve proper switching characteristics in ZnO-based PMC devices.
研究了过氧化物表面处理对基于过氧化锌（ZnO）的可编程金属化单元（PMC）器件电阻开关特性的影响。过氧化物处理导致ZnO从六方相转变为立方相；然而，过度处理会导致晶体分解。与Cu/ZnO/ITO（对照器件）相比，化学合成的ZnO在Cu/ZnO/ZnO/ITO中以低得多的工作电流促进了开关行为的发生。然而，随着过氧化物处理时间的延长，开关稳定性会下降。我们认为ZnO的微观结构是导致这种降解行为的原因，对ZnO特性进行微调对于在基于ZnO的PMC器件中实现适当的开关特性是必要的。
