School of Engineering, University of Glasgow, Glasgow, G12 8LS, United Kingdom.
Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota, 55455, United States.
Sci Rep. 2017 Jul 19;7(1):5820. doi: 10.1038/s41598-017-06043-z.
The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the 'missing link' in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.
本文首次实现了基于硅的绝缘体上硅(SOI)法拉第旋转的实验型 TE 模式光隔离器,以填补源集成近红外光子电路中的“缺失环节”。这些隔离器是简单的一维 2 元件波导,其中石榴石包层和纵向磁场产生非互易模式转换,这是波导等效的法拉第旋转(FR)。准相位匹配包层用于克服双折射的限制。目前的 SOI 隔离器在干涉仪或环形谐振器中使用非互易相移(NRPS),但到目前为止,NRPS 需要 TM 模式,因此如果没有许多辅助的偏振控制,集成激光器通常产生的 TE 模式就无法隔离。本文介绍的 FR 隔离器通过光刻和溅射沉积制成,与用于 NRPS 器件制造的脉冲激光沉积或晶圆键合相比,更容易进行规模化生产。在这里,获得了 11 dB 和 4 dB 的隔离比和损耗,并且确定了未来的设计能够实现 >30 dB 的隔离比和 <6 dB 的损耗。