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基于绝缘体上砷化镓的宽带、低损耗和紧凑型TM磁光隔离器的两种结构设计。

Two Structural Designs of Broadband, Low-Loss, and Compact TM Magneto-Optical Isolator Based on GaAs-on-Insulator.

作者信息

Liu Li, Chen Wan-Ting, Zhao Jia, Zhang Chen

机构信息

School of Information Science and Engineering, Shandong University, Qingdao 266237, China.

出版信息

Nanomaterials (Basel). 2024 Feb 21;14(5):400. doi: 10.3390/nano14050400.

Abstract

Integrated optical isolators are important building blocks for photonic integrated chips. Despite significant advances in isolators integrated on silicon-on-insulator (SOI) platforms, integrated isolators on GaAs-on-insulator platforms are rarely reported. In this paper, two structural designs of optical isolators based on the TM basic mode of GaAs-on-insulator are proposed. The non-reciprocal phase shift (NRPS) of GaAs/Ce:YIG waveguides with different geometric structures are calculated using numerical simulation. The isolators achieve 35 dB isolation bandwidths greater than 53.5 nm and 70 nm at 1550 nm, with total insertion losses of 2.59 dB and 2.25 dB, respectively. A multi-mode interferometric (MMI) coupler suitable for these two structures is proposed. In addition, suitable manufacturing processes are discussed based on the simulated process tolerances.

摘要

集成光隔离器是光子集成芯片的重要组成部分。尽管绝缘体上硅(SOI)平台上的隔离器取得了重大进展,但绝缘体上砷化镓(GaAs)平台上的集成隔离器却鲜有报道。本文提出了基于绝缘体上砷化镓TM基模的两种光隔离器结构设计。利用数值模拟计算了不同几何结构的GaAs/Ce:YIG波导的非互易相移(NRPS)。这些隔离器在1550 nm处实现了大于53.5 nm和70 nm的35 dB隔离带宽,总插入损耗分别为2.59 dB和2.25 dB。提出了一种适用于这两种结构的多模干涉(MMI)耦合器。此外,还根据模拟的工艺容差讨论了合适的制造工艺。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/85a2/10934905/afbc5198a609/nanomaterials-14-00400-g001.jpg

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