采用化学浴沉积法制备的 CuSnS（CTS）薄膜的光电化学（PEC）研究。
Photoelectrochemical (PEC) studies on CuSnS (CTS) thin films deposited by chemical bath deposition method.
机构信息
Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, M.S., India.
Optoelectronic Convergence Research Centre, Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, South Korea.
出版信息
J Colloid Interface Sci. 2017 Nov 15;506:144-153. doi: 10.1016/j.jcis.2017.07.032. Epub 2017 Jul 11.
CuSnS (CTS) thin films have been successfully deposited on a cost-effective stainless steel substrate by simple and inexpensive chemical bath deposition (CBD) method. The films are deliberated in provisos of their structural, morphological, optical and photoelectrochemical (PEC) properties before and after annealing treatment, using various physico-chemical techniques. The XRD studies showed the formation of triclinic phase of CTS films with nanocrystalline structure. Also, the crystallinity is enhanced with annealing and the secondary phase of CuS observed. Raman analysis confirmed the formation of CTS compound with secondary CuS phase. The SEM images also discovered mostly tiny spherical grains and significant progress in the size of grains after annealing. The films possess direct transitions with band gap energies of 1.35eV and 1.31eV before and after annealing, respectively. The improved photoconversion efficiency of CTS thin film based PEC cell is explained with the help of theoretical modeling of energy band diagram and correspondent circuit model of the impedance spectra.
通过简单且廉价的化学浴沉积（CBD）方法，成功地在经济实惠的不锈钢衬底上沉积了 CuSnS（CTS）薄膜。在退火处理前后，使用各种物理化学技术，对薄膜的结构、形态、光学和光电化学（PEC）性能进行了详细研究。XRD 研究表明，CTS 薄膜具有纳米晶结构的三斜晶相。此外，退火后结晶度增强，观察到 CuS 的次相。拉曼分析证实了 CTS 化合物与 CuS 次相的形成。SEM 图像还发现，退火后晶粒的尺寸明显增大，主要是细小的球形颗粒。薄膜具有直接跃迁，其带隙能量分别为 1.35eV 和 1.31eV。通过能带图的理论建模和阻抗谱的相应电路模型，解释了基于 CTS 薄膜的 PEC 电池光电转换效率的提高。
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