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化学浴沉积CuSnS（CTS）薄膜的光电应用。

Optoelectronic applications of chemical bath deposited CuSnS (CTS) thin films.

作者信息

Raval Jolly B, Chaki Sunil H, Tailor Jiten P, Bhatt Sandip V, Patel Sefali R, Desai Rahul K, Chakrabarty Bishwajit S, Deshpande Milind P

机构信息

P.G. Department of Physics, Sardar Patel University Vallabh Vidyanagar Gujarat - 388120 India

Department of Physics, M.B. Patel Science College Anand Gujarat - 388001 India

出版信息

RSC Adv. 2025 Jul 11;15(30):24304-24316. doi: 10.1039/d5ra03157e. eCollection 2025 Jul 10.

DOI:10.1039/d5ra03157e
PMID:40656566
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12247045/
Abstract

CuSnS (CTS) thin film (TF) is deposited by a low-cost chemical bath deposition method. The wurtzite unit cell structure of deposited CTS TF is confirmed by X-ray diffraction analysis. The atomic force microscopy shows uniform and defect-free deposition of CTS TF. The direct optical bandgap of 1.48 eV is confirmed by diffuse reflectance spectroscopy. The deposited CTS TF is studied for photo-response properties. Responsivity, sensitivity, and detectivity of 5.73 mW A, 114.27 × 10, and 6.39 × 10 Jones are obtained respectively. In another application, the first ever heterojunction and a photo-electrochemical (PEC) type CTS-TiO configuration within a single solar cell device is carried out. This CTS-TiO based combined solar cell delivered a current density of 0.05 mA cm, open circuit voltage of 0.47 V, efficiency of 0.014%, and fill factor of 0.63. Theoretical predictions of solar cell parameters for the CTS-CdX (X = S, Se) heterojunction device are carried out using SCAPS-1D simulation. Temperature-dependent thickness variations at 273, 298, 310, and 373 K are carried out to evaluate the device performance. The obtained results are discussed in detail.

摘要

通过低成本化学浴沉积法制备了CuSnS（CTS）薄膜（TF）。通过X射线衍射分析证实了沉积的CTS TF的纤锌矿晶胞结构。原子力显微镜显示CTS TF的沉积均匀且无缺陷。通过漫反射光谱法确认了1.48 eV的直接光学带隙。对沉积的CTS TF进行了光响应特性研究。分别获得了5.73 mW A的响应度、114.27×10的灵敏度和6.39×10琼斯的探测率。在另一个应用中，在单个太阳能电池器件中首次实现了异质结和光电化学（PEC）型CTS-TiO结构。这种基于CTS-TiO的组合太阳能电池的电流密度为0.05 mA cm，开路电压为0.47 V，效率为0.014%，填充因子为0.63。使用SCAPS-1D模拟对CTS-CdX（X = S，Se）异质结器件的太阳能电池参数进行了理论预测。在273、298、310和373 K下进行了温度相关的厚度变化实验，以评估器件性能。对获得的结果进行了详细讨论。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/0112abc87ee3/d5ra03157e-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/23f63fb0bd67/d5ra03157e-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/56ecaa74a4d0/d5ra03157e-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/28aecf9ec286/d5ra03157e-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/da0a5c621947/d5ra03157e-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/cb46b58b967e/d5ra03157e-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/14649766c6f7/d5ra03157e-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/d9dd14fe838a/d5ra03157e-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/fda5c035f081/d5ra03157e-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/5bacad5023bc/d5ra03157e-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/0112abc87ee3/d5ra03157e-f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/23f63fb0bd67/d5ra03157e-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/56ecaa74a4d0/d5ra03157e-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/28aecf9ec286/d5ra03157e-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/da0a5c621947/d5ra03157e-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/cb46b58b967e/d5ra03157e-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/14649766c6f7/d5ra03157e-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/d9dd14fe838a/d5ra03157e-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/fda5c035f081/d5ra03157e-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/5bacad5023bc/d5ra03157e-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d221/12247045/0112abc87ee3/d5ra03157e-f10.jpg

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