Huo Dewang, Zhang Jingwen, Wang Hao, Ren Xiaoxuan, Wang Chao, Su Hang, Zhao Hua
Institute of Modern Optics, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China.
Key Laboratory of Micro-Optics and Photonics Technology of Heilongjiang Province, Harbin, 150001, China.
Nanoscale Res Lett. 2017 Dec;12(1):465. doi: 10.1186/s11671-017-2232-4. Epub 2017 Jul 25.
A broadband metamaterial absorber (MA) composed of hexagonal-arranged single-sized titanium nitride (TiN) nano-disk array and monolayer molybdenum disulfide (MoS) is studied using finite-difference time-domain (FDTD) simulations. The structure of TiN nano-disk array/dielectric silica (SiO)/aluminum (Al) is adopted in our design. By optimizing the dimension parameters of the structure, an average absorption of 96.1% is achieved from 400 to 850 nm. In addition, by inserting a monolayer MoS which has high absorption at the short wavelength side underneath the TiN nano-disk array, an average absorption of 98.1% over the entire visible regime from 400 to 850 nm was achieved, with a peak absorption near 100% and absorption over 99% from 475 to 772 nm. Moreover, the absorber presented in this paper is polarization insensitive. This compact and unique design with TiN nano-disk/monolayer MoS/ SiO/Al structure may have great potential for applications in photovoltaics and light trapping.
利用时域有限差分（FDTD）模拟研究了一种由六边形排列的单一尺寸氮化钛（TiN）纳米盘阵列和单层二硫化钼（MoS）组成的宽带超材料吸收体（MA）。我们的设计采用了TiN纳米盘阵列/介电二氧化硅（SiO）/铝（Al）的结构。通过优化结构的尺寸参数，在400至850纳米范围内实现了96.1%的平均吸收率。此外，通过在TiN纳米盘阵列下方插入在短波长侧具有高吸收率的单层MoS，在400至850纳米的整个可见光范围内实现了98.1%的平均吸收率，峰值吸收率接近100%，在475至772纳米范围内吸收率超过99%。此外，本文提出的吸收体对偏振不敏感。这种具有TiN纳米盘/单层MoS/SiO/Al结构的紧凑且独特的设计在光伏和光捕获应用中可能具有巨大潜力。
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